| PART |
Description |
Maker |
| 2SC3326 E000830 |
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SC3327 E000831 |
From old datasheet system
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SA1955 |
TRANSISTOR (GENERAL PURPOSE AMPLIFIER/ SWITCHING AND MUTING SWITCH APPLICATIONS)
TRANSISTOR (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SA1955F |
General Purpose Amplifier Applications Switching and Muting Switch Application
|
Toshiba Semiconductor
|
| 2SA195507 2SA1955 |
General Purpose Amplifier Applications Switching and Muting Switch Application
|
Toshiba Semiconductor
|
| 2SC332607 2SC3326 |
Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
|
Toshiba Semiconductor
|
| HN1C03FU |
Transistor Silicon Npn Epitaxial Type (PCT Process) For Muting and Switching Applications
|
TOSHIBA
|
| 2SC5376F |
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS
|
Toshiba Semiconductor
|
| RN1304 RN1306 RN1302 RN1303 RN1305 RN1301 RN1303TE |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications
Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| 2SC3327 2SC3327B |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SPAK
TRANSISTOR SILICON NPN EPITAXIAL TYPE FOR MUTING AND SWITCHING APPLICATIONS
|
TOSHIBA
|
| KRC682T KRC686T KRC681T KRC683T KRC684T KRC685T |
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING) 外延平面NPN晶体管（切换，音频静音）
(KRC681T - KRC686T) EPITAXIAL PLANAR NPN TRANSISTOR
Built in Bias Resistor
|
KEC Holdings
KEC[KEC(Korea Electronics)]
Korea Electronics (KEC)
|
